Computational Electronics: Semiconductor Transport and by M. R. Pinto, W. M. Coughran Jr., C. S. Rafferty, R. K.

By M. R. Pinto, W. M. Coughran Jr., C. S. Rafferty, R. K. Smith, E. Sangiorgi (auth.), K. Hess, J. P. Leburton, U. Ravaioli (eds.)

Large computational assets are of ever expanding significance for the simulation of semiconductor strategies, units and built-in circuits. The Workshop on Computational Electronics used to be meant to be a discussion board for the dis­ cussion of the state of the art of gadget simulation. 3 significant examine parts have been coated: traditional simulations, in response to the drift-diffusion and the hydrodynamic types; Monte Carlo tools and different ideas for the answer of the Boltzmann shipping equation; and computational methods to quantum shipping that are correct to novel units in response to quantum interference and resonant tunneling phenomena. Our objective was once to assemble researchers from quite a few disciplines that give a contribution to the development of equipment simulation. those contain computing device Sci­ ence, electric Engineering, utilized Physics and utilized arithmetic. The suc­ cess of this multidisciplinary formulation was once confirmed through various interactions which happened on the Workshop and through the subsequent three-day brief path on Computational Electronics. The layout of the direction, together with a couple of educational lectures, and the massive attendance of graduate scholars, prompted many discussions and has confirmed to us once again the significance of cross-fertilization among the several disciplines.

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Richardson and T. L. Crandle, "PEPPER - A Process Simulator for VLSI," IEEE Trans. on Computer Aided Design, 8, 4, pp. 336-349, April 1989. 10. Pinto, M. , C. S. Rafferty, and R. W. Dutton, "PISCES-II: Poisson and Continuity Equation Solver," Stanford Electronics Lab. Tech. , 1984. 11. Shanna, M. and G. F. Carey, "Semiconductor Device Simulation Using Adaptive Refinement and Flux Upwinding, IEEE Trans. on Computer Aided Design, 8, 6, pp. 590-598, June 1989. A Numerical Large Signal Model for the Heterojunction Bipolar Transistor 1 Douglas A.

J (5) 49 8.. n(Fp , F", . ,) - tPi,H1 - tPi,j 2 (6) where tP is the electric potential, In the electron current, i and j the grid numbers, hand k the geometrical factors, and Fp and F" the parallel and vertical electric fields with respect to the direction of the current flow. By Eq. (5) and Eq. (6), the augmented current equation can be readily expressed with the new mobility and diffusivity models: (7) D(Fp, F,,) = kBTC(Fp) q I'LIs(Fp, F,,) (8) OSMOSIS is divided into five different sections for modification ease: 1.

Venkat Department of Electrical and Computer Engineering University of Nevada, Las Vegas Las Vegas, NV 89154 Abstract A new two-dimensional self-consistent numerical model for HEMT is presented. In previous two-dimensional models, the quantization of electrons in the quantum well has been treated by using a triangular well approximation in which the width of the quantum well is assumed to be zero and the quantized electrons are assumed to reside right at the heterojunction. In this paper, we do not make the above assumptions.

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